onsemi NTHL Type N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-247

RS-artikelnummer:: 189-0256
Tillv. art.nr:: NTHL190N65S3HF
Tillverkare / varumärke:: onsemi

onsemi NTHL Type N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-247

Mängdrabatt möjlig

Antal (1 rör med 30 enheter)*

1 486,68 kr

(exkl. moms)

1 858,35 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

Tillfälligt slut

Leverans från den 04 maj 2026

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Enheter	Per enhet	Per Rør*
30 - 90	49,556 kr	1 486,68 kr
120 - 240	48,272 kr	1 448,16 kr
270 - 480	47,033 kr	1 410,99 kr
510 +	45,845 kr	1 375,35 kr

*vägledande pris

RS-artikelnummer:: 189-0256
Tillv. art.nr:: NTHL190N65S3HF
Tillverkare / varumärke:: onsemi

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	20A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-247
	Series	NTHL
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	190mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	34nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	162W
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	150°C
	Width	4.82 mm
	Standards/Approvals	No
	Height	20.82mm
	Length	15.87mm
	Automotive Standard	No

	Välj alla
	Brand onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 20A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-247
	Series NTHL
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 190mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 34nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 162W
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 150°C
	Width 4.82 mm
	Standards/Approvals No
	Height 20.82mm
	Length 15.87mm
	Automotive Standard No

Datasheet NTHL190N65S3HF

SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.

700 V @ TJ = 150 °C

Ultra Low Gate Charge (Typ. Qg = 35 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 467 pF)

Excellent body diode performance (low Qrr, robust body diode)

Optimized Capacitance

Typ. RDS(on) = 161 mΩ

Benefits

Higher system reliability at low temperature operation

Lower switching loss

Higher system reliability in LLC and Phase shift full bridge circuit

Lower peak Vds and lower Vgs oscillation

Applications

Telecommunication

Cloud system

Industrial

End Products

Telecom power

Server power

EV charger

Solar / UPS

onsemi NTHL Type N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-247

GRATIS leverans för online beställningar över 500,00 kr

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