STMicroelectronics STB Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-263

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14 817,00 kr

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18 521,00 kr

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RS-artikelnummer:
192-4649
Tillv. art.nr:
STB18N60M6
Tillverkare / varumärke:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

13A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

STB

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

280mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.6V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

25 V

Typical Gate Charge Qg @ Vgs

16.8nC

Maximum Power Dissipation Pd

110W

Maximum Operating Temperature

150°C

Length

10.4mm

Height

4.37mm

Standards/Approvals

No

Width

9.35 mm

Automotive Standard

No

COO (Country of Origin):
CN
The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.

Reduced switching losses

Lower RDS(on) per area vs previous generation

Low gate input resistance

Zener-protected

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