onsemi Type N-Channel MOSFET, 36 A, 650 V Enhancement, 3-Pin TO-263 NTB095N65S3HF

RS-artikelnummer:: 189-0381
Tillv. art.nr:: NTB095N65S3HF
Tillverkare / varumärke:: onsemi

onsemi Type N-Channel MOSFET, 36 A, 650 V Enhancement, 3-Pin TO-263 NTB095N65S3HF

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Antal (1 förpackning med 2 enheter)*

136,53 kr

(exkl. moms)

170,662 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

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Leverans från den 18 maj 2026

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Enheter	Per enhet	Per förpackning*
2 - 18	68,265 kr	136,53 kr
20 - 198	58,855 kr	117,71 kr
200 +	51,015 kr	102,03 kr

*vägledande pris

RS-artikelnummer:: 189-0381
Tillv. art.nr:: NTB095N65S3HF
Tillverkare / varumärke:: onsemi

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	36A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	95mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30 V
	Typical Gate Charge Qg @ Vgs	66nC
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	272W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	9.65 mm
	Standards/Approvals	No
	Height	4.58mm
	Length	10.67mm
	Automotive Standard	No

	Välj alla
	Brand onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 36A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 95mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30 V
	Typical Gate Charge Qg @ Vgs 66nC
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 272W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 9.65 mm
	Standards/Approvals No
	Height 4.58mm
	Length 10.67mm
	Automotive Standard No

Datasheet NTB095N65S3HF

SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.

700 V @ TJ = 150 °C

Ultra Low Gate Charge (Typ. Qg = 66 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 569 pF)

Excellent body diode performance (low Qrr, robust body diode)

Optimized Capacitance

Typ. RDS(on) = 80 mΩHigher system reliability at low temperature operation

Lower switching loss

Higher system reliability in LLC and Phase shift full bridge circuit

Lower peak Vds and lower Vgs oscillation

Applications

Telecommunication

Cloud system

Industrial

End Products

Telecom power

Server power

EV charger

Solar / UPS

onsemi Type N-Channel MOSFET, 36 A, 650 V Enhancement, 3-Pin TO-263 NTB095N65S3HF

GRATIS leverans för online beställningar över 500,00 kr

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