onsemi Type N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-263
- RS-artikelnummer:
- 195-2666
- Tillv. art.nr:
- NVB190N65S3F
- Tillverkare / varumärke:
- onsemi
Antal (1 rulle med 800 enheter)*
14 352,80 kr
(exkl. moms)
17 940,80 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 29 maj 2026
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 800 + | 17,941 kr | 14 352,80 kr |
*vägledande pris
- RS-artikelnummer:
- 195-2666
- Tillv. art.nr:
- NVB190N65S3F
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 162W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.58mm | |
| Width | 9.65 mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 162W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Maximum Operating Temperature 150°C | ||
Height 4.58mm | ||
Width 9.65 mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.
701 V @ TJ = 150°C
Higher system reliability at low temperature operation
Ultra Low Gate Charge (Typ. Qg = 34 nC)
Lower switching loss
Low Effective Output Capacitance (Typ. Coss(eff.) = 314 pF)
Lower switching loss
PPAP Capable
Typ. RDS(on) = 158 mΩ
Application
HV DC/DC converter
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