onsemi Type N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-263 NVB190N65S3F

RS-artikelnummer:: 195-2667
Tillv. art.nr:: NVB190N65S3F
Tillverkare / varumärke:: onsemi

onsemi Type N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-263 NVB190N65S3F

Mängdrabatt möjlig

Antal (1 förpackning med 10 enheter)*

272,47 kr

(exkl. moms)

340,59 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

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270 enhet(er) är redo att levereras

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Enheter	Per enhet	Per förpackning*
10 - 90	27,247 kr	272,47 kr
100 - 240	23,484 kr	234,84 kr
250 +	20,366 kr	203,66 kr

*vägledande pris

RS-artikelnummer:: 195-2667
Tillv. art.nr:: NVB190N65S3F
Tillverkare / varumärke:: onsemi

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	20A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	190mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	34nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	162W
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Operating Temperature	150°C
	Height	4.58mm
	Length	10.67mm
	Width	9.65 mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Välj alla
	Brand onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 20A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 190mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 34nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 162W
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Operating Temperature 150°C
	Height 4.58mm
	Length 10.67mm
	Width 9.65 mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

Datasheet NVB190N65S3F

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.

701 V @ TJ = 150°C

Higher system reliability at low temperature operation

Ultra Low Gate Charge (Typ. Qg = 34 nC)

Lower switching loss

Low Effective Output Capacitance (Typ. Coss(eff.) = 314 pF)

Lower switching loss

PPAP Capable

Typ. RDS(on) = 158 mΩ

Application

HV DC/DC converter

onsemi Type N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-263 NVB190N65S3F

GRATIS leverans för online beställningar över 500,00 kr

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