onsemi Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-220 NTP150N65S3HF

RS-artikelnummer:: 189-0372
Tillv. art.nr:: NTP150N65S3HF
Tillverkare / varumärke:: onsemi

onsemi Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-220 NTP150N65S3HF

Antal (1 förpackning med 5 enheter)*

148,38 kr

(exkl. moms)

185,475 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

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Leverans från den 28 april 2026

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Enheter	Per enhet	Per förpackning*
5 +	29,676 kr	148,38 kr

*vägledande pris

RS-artikelnummer:: 189-0372
Tillv. art.nr:: NTP150N65S3HF
Tillverkare / varumärke:: onsemi

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	24A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	150mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30 V
	Typical Gate Charge Qg @ Vgs	43nC
	Maximum Power Dissipation Pd	192W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	150°C
	Length	10.67mm
	Height	16.3mm
	Width	4.7 mm
	Standards/Approvals	No
	Automotive Standard	No

	Välj alla
	Brand onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 24A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 150mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30 V
	Typical Gate Charge Qg @ Vgs 43nC
	Maximum Power Dissipation Pd 192W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 150°C
	Length 10.67mm
	Height 16.3mm
	Width 4.7 mm
	Standards/Approvals No
	Automotive Standard No

Datasheet NTP150N65S3HF

SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.

700 V @ TJ = 150 °C

Ultra Low Gate Charge (Typ. Qg = 43 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 400 pF)

Higher system reliability at low temperature operation

Excellent body diode performance (low Qrr, robust body diode)

Optimized Capacitance

Typ. RDS(on) = 121 mΩ

Lower switching loss

Higher system reliability in LLC and Phase shift full bridge circuit

Lower peak Vds and lower Vgs oscillation

Applications

Telecommunication

Cloud system

Industrial

End Products

Telecom power

Server power

EV charger

Solar / UPS

onsemi Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-220 NTP150N65S3HF

GRATIS leverans för online beställningar över 500,00 kr

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