onsemi Type N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-220

RS-artikelnummer:: 189-0264
Tillv. art.nr:: NTPF190N65S3HF
Tillverkare / varumärke:: onsemi

onsemi Type N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-220

Antal (1 rör med 50 enheter)*

1 135,10 kr

(exkl. moms)

1 418,90 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

I lager

Dessutom levereras 750 enhet(er) från den 29 december 2025

Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"

Enheter	Per enhet	Per Rør*
50 +	22,702 kr	1 135,10 kr

*vägledande pris

RS-artikelnummer:: 189-0264
Tillv. art.nr:: NTPF190N65S3HF
Tillverkare / varumärke:: onsemi

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

Hitta liknande produkter genom att välja ett eller flera attribut.

Välj alla	Attribut	Värde
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	20A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	190mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	34nC
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	36W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	16.12mm
	Width	4.9 mm
	Length	10.63mm
	Automotive Standard	No

	Välj alla
	Brand onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 20A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 190mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 34nC
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 36W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 16.12mm
	Width 4.9 mm
	Length 10.63mm
	Automotive Standard No

Datasheet NTPF190N65S3HF

SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.

700 V @ TJ = 150 °C

Ultra Low Gate Charge (Typ. Qg = 35 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 467 pF)

Optimized Capacitance

Typ. RDS(on) = 161 mΩ

Higher system reliability at low temperature operation

Lower switching loss

Higher system reliability in LLC and Phase shift full bridge circuit

Lower peak Vds and lower Vgs oscillation

Applications

Computing

Consumer

Industrial

End Products

Notebook / Desktop computer / Game console

Telecom / Server

LED Lighting / Ballast

Adapter

onsemi Type N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-220

GRATIS leverans för online beställningar över 500,00 kr

relaterade länkar