onsemi Type N-Channel MOSFET, 40 A, 650 V Enhancement, 3-Pin TO-220

RS-artikelnummer:: 178-4258
Tillv. art.nr:: NTPF082N65S3F
Tillverkare / varumärke:: onsemi

onsemi Type N-Channel MOSFET, 40 A, 650 V Enhancement, 3-Pin TO-220

Antal (1 rör med 50 enheter)*

1 569,15 kr

(exkl. moms)

1 961,45 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

Sista RS lager

Slutlig(a) 300 enhet(er), redo att levereras

Enheter	Per enhet	Per Rør*
50 +	31,383 kr	1 569,15 kr

*vägledande pris

RS-artikelnummer:: 178-4258
Tillv. art.nr:: NTPF082N65S3F
Tillverkare / varumärke:: onsemi

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	82mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	70nC
	Maximum Power Dissipation Pd	48W
	Maximum Gate Source Voltage Vgs	30 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	4.9 mm
	Standards/Approvals	No
	Length	10.63mm
	Height	16.12mm
	Automotive Standard	No

	Välj alla
	Brand onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 82mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 70nC
	Maximum Power Dissipation Pd 48W
	Maximum Gate Source Voltage Vgs 30 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 4.9 mm
	Standards/Approvals No
	Length 10.63mm
	Height 16.12mm
	Automotive Standard No

COO (Country of Origin):: CN

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.

Features

700 V @ T_J = 150 oC

Ultra Low Gate Charge (Typ. Qg = 70 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 680 pF)

Optimized Capacitance

Excellent body diode performance (low Qrr, robust body diode)

Typ. RDS(on) = 70 mΩ

Higher system reliability at low temperature operation

Lower switching loss

Lower peak Vds and lower Vgs oscillation

Higher system reliability in LLC and Phase shift full bridge Circuit

Applications

Telecommunication

Cloud system

Industrial

End Products

Telecom power

Server power

Solar / UPS

EV charger

onsemi Type N-Channel MOSFET, 40 A, 650 V Enhancement, 3-Pin TO-220

GRATIS leverans för online beställningar över 500,00 kr

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