STMicroelectronics Type N-Channel MOSFET, 5 A, 650 V Enhancement, 3-Pin IPAK

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23 755,00 kr

(exkl. moms)

29 695,00 kr

(inkl. moms)

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2500 +9,502 kr23 755,00 kr

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RS-artikelnummer:
188-8290
Tillv. art.nr:
STD5NM60T4
Tillverkare / varumärke:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

5A

Maximum Drain Source Voltage Vds

650V

Package Type

IPAK

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.5V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

96W

Typical Gate Charge Qg @ Vgs

13nC

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Height

6.2mm

Width

2.4 mm

Length

6.6mm

Standards/Approvals

No

Automotive Standard

No

The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performances.

Low input capacitance and gate charge

HIgh dv/dt and avalanche capabilities

Low gate input resistance

Applications

Switching applications

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