STMicroelectronics Type N-Channel MOSFET, 2.5 A, 800 V Enhancement, 3-Pin IPAK STD3NK80Z-1
- RS-artikelnummer:
- 687-5352
- Tillv. art.nr:
- STD3NK80Z-1
- Tillverkare / varumärke:
- STMicroelectronics
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
89,38 kr
(exkl. moms)
111,725 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 70 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 20 | 17,876 kr | 89,38 kr |
| 25 - 45 | 16,80 kr | 84,00 kr |
| 50 - 120 | 15,948 kr | 79,74 kr |
| 125 - 245 | 15,03 kr | 75,15 kr |
| 250 + | 14,268 kr | 71,34 kr |
*vägledande pris
- RS-artikelnummer:
- 687-5352
- Tillv. art.nr:
- STD3NK80Z-1
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.5A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | IPAK | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.5Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Maximum Power Dissipation Pd | 70W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.6V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 6.2mm | |
| Width | 2.4 mm | |
| Length | 6.6mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.5A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type IPAK | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.5Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Maximum Power Dissipation Pd 70W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.6V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 6.2mm | ||
Width 2.4 mm | ||
Length 6.6mm | ||
Automotive Standard No | ||
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
relaterade länkar
- STMicroelectronics Type N-Channel MOSFET 800 V Enhancement, 3-Pin IPAK
- STMicroelectronics Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- STMicroelectronics Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 STP3NK80Z
- STMicroelectronics Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 STP3N80K5
- Vishay SiHU5N80AE Type N-Channel MOSFET 800 V Enhancement, 3-Pin IPAK
- Vishay SiHU4N80AE Type N-Channel MOSFET 800 V Enhancement, 3-Pin IPAK
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin IPAK
- STMicroelectronics Type N-Channel MOSFET 650 V Enhancement, 3-Pin IPAK