STMicroelectronics SuperMESH Type N-Channel MOSFET, 2.4 A, 600 V Enhancement, 3-Pin IPAK

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92,96 kr

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116,20 kr

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RS-artikelnummer:
151-950
Tillv. art.nr:
STD3NK60Z-1
Tillverkare / varumärke:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2.4A

Maximum Drain Source Voltage Vds

600V

Package Type

IPAK

Series

SuperMESH

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

3.6Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

11.8nC

Maximum Gate Source Voltage Vgs

±30 V

Maximum Power Dissipation Pd

45W

Forward Voltage Vf

1.6V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET developed using the Super MESH technology, an optimization of the well established Power MESH. In addition to a significant reduction in on resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.

100% avalanche tested

Gate charge minimized

Very low intrinsic capacitance

Zener protected

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