Vishay Siliconix Dual TrenchFET 2 Type N, Type P-Channel MOSFET, 30 A, 40 V Enhancement, 8-Pin SO-8 SQJ504EP-T1_GE3
- RS-artikelnummer:
- 178-3893
- Tillv. art.nr:
- SQJ504EP-T1_GE3
- Tillverkare / varumärke:
- Vishay Siliconix
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
152,32 kr
(exkl. moms)
190,40 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Försörjningsbrist
- 30 kvar, redo att levereras
- Dessutom levereras 1 410 enhet(er) från den 01 januari 2026
Vårt nuvarande lager är begränsat och våra leverantörer förväntar sig brist.
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 90 | 15,232 kr | 152,32 kr |
| 100 - 490 | 14,762 kr | 147,62 kr |
| 500 - 990 | 14,381 kr | 143,81 kr |
| 1000 + | 14,00 kr | 140,00 kr |
*vägledande pris
- RS-artikelnummer:
- 178-3893
- Tillv. art.nr:
- SQJ504EP-T1_GE3
- Tillverkare / varumärke:
- Vishay Siliconix
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay Siliconix | |
| Product Type | MOSFET | |
| Channel Type | Type N, Type P | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 34W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 12.1nC | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 5 mm | |
| Height | 1.07mm | |
| Length | 5.99mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Vishay Siliconix | ||
Product Type MOSFET | ||
Channel Type Type N, Type P | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SO-8 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 34W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 12.1nC | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 5 mm | ||
Height 1.07mm | ||
Length 5.99mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
RoHS-status: Undantagen
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount dual channel (both N and P-channels) MOSFET is a new age product with a drain-source voltage of 40V. It has drain-source resistance of 17mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 34W and a continuous drain current of 30A. The MOSFET has been optimized, for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality. It is applicable in the automotive industry.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET
Certifications
• AEC-Q101
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested
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