onsemi BVSS8L Type P-Channel MOSFET, 130 mA, 50 V Enhancement, 3-Pin SOT-23
- RS-artikelnummer:
- 184-4197
- Tillv. art.nr:
- BVSS84LT1G
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 rulle med 3000 enheter)*
2 781,00 kr
(exkl. moms)
3 477,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Försörjningsbrist
- Dessutom levereras 18 000 enhet(er) från den 29 december 2025
Vårt nuvarande lager är begränsat och våra leverantörer förväntar sig brist.
Enheter | Per enhet | Per rulle* |
|---|---|---|
| 3000 - 6000 | 0,927 kr | 2 781,00 kr |
| 9000 - 42000 | 0,794 kr | 2 382,00 kr |
| 45000 - 96000 | 0,763 kr | 2 289,00 kr |
| 99000 + | 0,743 kr | 2 229,00 kr |
*vägledande pris
- RS-artikelnummer:
- 184-4197
- Tillv. art.nr:
- BVSS84LT1G
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 130mA | |
| Maximum Drain Source Voltage Vds | 50V | |
| Series | BVSS8L | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 2.2nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 225mW | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4 mm | |
| Standards/Approvals | No | |
| Height | 1.01mm | |
| Length | 3.04mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 130mA | ||
Maximum Drain Source Voltage Vds 50V | ||
Series BVSS8L | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 2.2nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 225mW | ||
Maximum Operating Temperature 150°C | ||
Width 1.4 mm | ||
Standards/Approvals No | ||
Height 1.01mm | ||
Length 3.04mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Automotive Power MOSFET ideal for low power applications. -50V -130mA 10 Ohm Single P-Channel SOT-23 Logic Level. PPAP capable suitable for automotive applications.
AEC Qualified
PPAP Capable
Miniature SOT-23 Surface Mount Package Saves Board Space
Automotive MOSFET
Applications
DC-DC Converters
Load Switching
Power Management in portable and battery-powered products such as computers, printers, cellular and cordless telephones
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