onsemi 2N7000 Type N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin TO-92
- RS-artikelnummer:
- 184-4156
- Tillv. art.nr:
- 2N7000-D26Z
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 rulle med 2000 enheter)*
2 048,00 kr
(exkl. moms)
2 560,00 kr
(inkl. moms)
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- 2 000 enhet(er) levereras från den 04 mars 2026
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 2000 - 4000 | 1,024 kr | 2 048,00 kr |
| 6000 - 8000 | 0,998 kr | 1 996,00 kr |
| 10000 + | 0,973 kr | 1 946,00 kr |
*vägledande pris
- RS-artikelnummer:
- 184-4156
- Tillv. art.nr:
- 2N7000-D26Z
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 200mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-92 | |
| Series | 2N7000 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 400mW | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.88V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.19 mm | |
| Standards/Approvals | No | |
| Length | 5.2mm | |
| Height | 5.33mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 200mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-92 | ||
Series 2N7000 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 400mW | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.88V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Width 4.19 mm | ||
Standards/Approvals No | ||
Length 5.2mm | ||
Height 5.33mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
These N-channel Small Signal MOSFETs are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-current applications.
Voltage Controlled Small Signal Switch
High Saturation Current Capability
Rugged and Reliable
High Density Cell Design for Low RDS(ON)
Applications
Small Servo Motor Control
Power MOSFET Gate Drivers
Assorted Switching Applications
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