onsemi FDP Type N-Channel MOSFET, 222 A, 100 V Enhancement, 3-Pin TO-220 FDP2D3N10C

RS-artikelnummer:: 181-1899
Tillv. art.nr:: FDP2D3N10C
Tillverkare / varumärke:: onsemi

onsemi FDP Type N-Channel MOSFET, 222 A, 100 V Enhancement, 3-Pin TO-220 FDP2D3N10C

Antal (1 förpackning med 2 enheter)*

107,52 kr

(exkl. moms)

134,40 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

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1 548 enhet(er) är redo att levereras

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Enheter	Per enhet	Per förpackning*
2 +	53,76 kr	107,52 kr

*vägledande pris

RS-artikelnummer:: 181-1899
Tillv. art.nr:: FDP2D3N10C
Tillverkare / varumärke:: onsemi

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	222A
	Maximum Drain Source Voltage Vds	100V
	Series	FDP
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	2.3mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	108nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	214W
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Height	15.21mm
	Length	10.36mm
	Width	4.67 mm
	Automotive Standard	No

	Välj alla
	Brand onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 222A
	Maximum Drain Source Voltage Vds 100V
	Series FDP
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 2.3mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 108nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 214W
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Height 15.21mm
	Length 10.36mm
	Width 4.67 mm
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

Max RDS(on) = 2.3 mΩ at VGS = 10 V, ID = 222 A

Power Density & Shielded Gate

High Performance Trench Technology for Extremely Low RDS(on)

High power density with Shielded gate technology

Extremely Low Reverse Recovery Charge, Qrr

Low Vds spike internal snubber function.

Low Gate Charge, QG = 108nC (Typ.)

Low switching loss

High Power and Current Handling Capability

Low Qrr/Trr

Soft recovery performance

Good EMI performance

Synchronous Rectification for ATX / Server / Workstation / Telecom PSU / Adapter and Industrial Power Supplies.

Motor drives and Uninterruptible Power Supplies

Micro Solar Inverter

Server

Telecom

Computing (ATX, Workstation, Adapter, Industrial Power Supplies etc.)

Motor Drive

Uninterruptible Power Supplies

onsemi FDP Type N-Channel MOSFET, 222 A, 100 V Enhancement, 3-Pin TO-220 FDP2D3N10C

GRATIS leverans för online beställningar över 500,00 kr

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