onsemi Type N-Channel MOSFET, 12 A, 100 V Enhancement, 3-Pin TO-220
- RS-artikelnummer:
- 368-3197
- Tillv. art.nr:
- RFP12N10L
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 rör med 50 enheter)*
330,20 kr
(exkl. moms)
412,75 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 350 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per Rør* |
|---|---|---|
| 50 - 200 | 6,604 kr | 330,20 kr |
| 250 - 450 | 6,429 kr | 321,45 kr |
| 500 - 950 | 6,252 kr | 312,60 kr |
| 1000 - 2450 | 6,102 kr | 305,10 kr |
| 2500 + | 5,945 kr | 297,25 kr |
*vägledande pris
- RS-artikelnummer:
- 368-3197
- Tillv. art.nr:
- RFP12N10L
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 200mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 60W | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 9.4mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Width | 4.83 mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 200mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 60W | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 9.4mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Width 4.83 mm | ||
Automotive Standard AEC-Q101 | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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