Vishay Single 1 Type P-Channel Power MOSFET, 11 A, 60 V TO-263
- RS-artikelnummer:
- 180-8832
- Tillv. art.nr:
- IRF9Z24SPBF
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
56,78 kr
(exkl. moms)
70,975 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 60 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 11,356 kr | 56,78 kr |
| 50 - 120 | 10,214 kr | 51,07 kr |
| 125 - 245 | 9,654 kr | 48,27 kr |
| 250 - 495 | 9,094 kr | 45,47 kr |
| 500 + | 8,512 kr | 42,56 kr |
*vägledande pris
- RS-artikelnummer:
- 180-8832
- Tillv. art.nr:
- IRF9Z24SPBF
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 0.28Ω | |
| Maximum Power Dissipation Pd | 60W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Single | |
| Length | 2.79mm | |
| Standards/Approvals | RoHS | |
| Width | 10.67 mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 0.28Ω | ||
Maximum Power Dissipation Pd 60W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Single | ||
Length 2.79mm | ||
Standards/Approvals RoHS | ||
Width 10.67 mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay IRF9Z24S is a P-channel power MOSFET having drain to source(Vds) voltage of -60V.The gate to source voltage(VGS) is 20V. It is having D2PAK (TO-263) package. It offers drain to source resistance (RDS.) 0.28ohms at 10VGS. Maximum drain current -11A.
Advanced process technology
Surface mount
175 °C operating temperature
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