Vishay Single Type N-Channel Power MOSFET, 11 A, 500 V TO-263

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Antal (1 rör med 50 enheter)*

431,20 kr

(exkl. moms)

539,00 kr

(inkl. moms)

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50 +8,624 kr431,20 kr

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RS-artikelnummer:
180-8349
Tillv. art.nr:
IRFS11N50APBF
Tillverkare / varumärke:
Vishay
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Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

500V

Package Type

TO-263

Maximum Drain Source Resistance Rds

0.52Ω

Maximum Power Dissipation Pd

170W

Typical Gate Charge Qg @ Vgs

52nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±30 V

Transistor Configuration

Single

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay MOSFET is an N-channel, TO-263-3 package is a new age product with a drain-source voltage of 500V and maximum gate-source voltage of 30V. It has a drain-source resistance of 520mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 170W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Effective coss specified

• Fully characterized capacitance and avalanche voltage and current

• Halogen and lead (Pb) free component

• Improved gate, avalanche and dynamic dV/dt

• Low gate charge Qg results in simple drive requirement

• Operating temperature ranges between -55°C and 150°C

Applications


• High speed power switching

• Switch mode power supply (SMPS)

• Uninterruptible power supplies

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