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Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 19.8 A, 20 V Enhancement, 8-Pin SO-8 SI4204DY-T1-GE3

RS-artikelnummer:: 180-8014
Tillv. art.nr:: SI4204DY-T1-GE3
Tillverkare / varumärke:: Vishay

Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 19.8 A, 20 V Enhancement, 8-Pin SO-8 SI4204DY-T1-GE3

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Antal (1 förpackning med 5 enheter)*

118,38 kr

(exkl. moms)

147,975 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

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Leverans från den 24 augusti 2026

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Enheter	Per enhet	Per förpackning*
5 - 45	23,676 kr	118,38 kr
50 - 120	20,116 kr	100,58 kr
125 - 245	17,74 kr	88,70 kr
250 - 495	15,366 kr	76,83 kr
500 +	14,202 kr	71,01 kr

*vägledande pris

RS-artikelnummer:: 180-8014
Tillv. art.nr:: SI4204DY-T1-GE3
Tillverkare / varumärke:: Vishay

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	19.8A
	Maximum Drain Source Voltage Vds	20V
	Package Type	SO-8
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.006Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	3.25W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	30nC
	Transistor Configuration	Dual
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	1mm
	Width	1.65 mm
	Length	3.05mm
	Number of Elements per Chip	2
	Automotive Standard	No

	Välj alla
	Brand Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 19.8A
	Maximum Drain Source Voltage Vds 20V
	Package Type SO-8
	Series TrenchFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.006Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 3.25W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 30nC
	Transistor Configuration Dual
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 1mm
	Width 1.65 mm
	Length 3.05mm
	Number of Elements per Chip 2
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount dual N-channel MOSFET is a new age product with a drain-source voltage of 20V. It also has drain-source resistance of 4.6mohm at a gate-source voltage of 10V. It has continuous drain current of 19.8A. The MOSFET has a maximum power rating of 3.25W. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• DC/DC Converter

• Fixed Telecommunication

• Notebook PC

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested

• UIS tested