Vishay TrenchFET Type P-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252 SQD50P06-15L_GE3
- RS-artikelnummer:
- 180-7967
- Tillv. art.nr:
- SQD50P06-15L_GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
171,36 kr
(exkl. moms)
214,20 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- 125 kvar, redo att levereras
- Sista 1 360 enhet(er) levereras från den 08 januari 2026
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 34,272 kr | 171,36 kr |
| 50 - 120 | 29,142 kr | 145,71 kr |
| 125 - 245 | 26,388 kr | 131,94 kr |
| 250 - 495 | 21,28 kr | 106,40 kr |
| 500 + | 18,548 kr | 92,74 kr |
*vägledande pris
- RS-artikelnummer:
- 180-7967
- Tillv. art.nr:
- SQD50P06-15L_GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TrenchFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 136W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -1.5V | |
| Typical Gate Charge Qg @ Vgs | 98nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.38mm | |
| Width | 6.73 mm | |
| Standards/Approvals | No | |
| Length | 10.41mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TrenchFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 136W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -1.5V | ||
Typical Gate Charge Qg @ Vgs 98nC | ||
Maximum Operating Temperature 175°C | ||
Height 2.38mm | ||
Width 6.73 mm | ||
Standards/Approvals No | ||
Length 10.41mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- TW
Vishay MOSFET
The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 20V. It has drain-source resistance of 15.5mohm at a gate-source voltage of 10V. It has continuous drain current of 50A and maximum power dissipation of 136W. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 175°C
• Package with low thermal resistance
• TrenchFET power MOSFET
Applications
• Adaptor switch
• Load switches
Certifications
• AEC-Q101
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested
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