Vishay Single TrenchFET Type P-Channel MOSFET, 40 A, 30 V, 8-Pin PowerPAK SO-8 SI7139DP-T1-GE3

RS-artikelnummer:: 180-7890
Tillv. art.nr:: SI7139DP-T1-GE3
Tillverkare / varumärke:: Vishay

Vishay Single TrenchFET Type P-Channel MOSFET, 40 A, 30 V, 8-Pin PowerPAK SO-8 SI7139DP-T1-GE3

Antal (1 förpackning med 10 enheter)*

58,74 kr

(exkl. moms)

73,42 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

Sista RS lager

Slutlig(a) 4 800 enhet(er), redo att levereras

Enheter	Per enhet	Per förpackning*
10 +	5,874 kr	58,74 kr

*vägledande pris

RS-artikelnummer:: 180-7890
Tillv. art.nr:: SI7139DP-T1-GE3
Tillverkare / varumärke:: Vishay

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Vishay
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	30V
	Series	TrenchFET
	Package Type	PowerPAK SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	00090Ω
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	48W
	Typical Gate Charge Qg @ Vgs	49.5nC
	Transistor Configuration	Single
	Maximum Operating Temperature	150°C
	Height	1.12mm
	Width	5.26 mm
	Length	6.25mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	Välj alla
	Brand Vishay
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 30V
	Series TrenchFET
	Package Type PowerPAK SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 00090Ω
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 48W
	Typical Gate Charge Qg @ Vgs 49.5nC
	Transistor Configuration Single
	Maximum Operating Temperature 150°C
	Height 1.12mm
	Width 5.26 mm
	Length 6.25mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay MOSFET is a P-channel, PowerPAK-SO-8 package is a new age product with a drain-source voltage of 30V and maximum gate-source voltage of 20V. It has a drain-source resistance of 5.5mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 48W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen and Lead (Pb) free component

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• Adaptor switches

• Battery switches

• Load switches

• Notebook computers

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested