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Vishay TrenchFET Type P-Channel MOSFET, 6 A, 20 V Enhancement, 3-Pin SOT-23 SI2399DS-T1-GE3

RS-artikelnummer:: 180-7829
Tillv. art.nr:: SI2399DS-T1-GE3
Tillverkare / varumärke:: Vishay

Vishay TrenchFET Type P-Channel MOSFET, 6 A, 20 V Enhancement, 3-Pin SOT-23 SI2399DS-T1-GE3

Mängdrabatt möjlig

Antal (1 förpackning med 20 enheter)*

86,02 kr

(exkl. moms)

107,52 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

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8 200 enhet(er) levereras från den 02 januari 2026

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Enheter	Per enhet	Per förpackning*
20 - 180	4,301 kr	86,02 kr
200 - 480	4,211 kr	84,22 kr
500 - 980	3,181 kr	63,62 kr
1000 - 1980	2,621 kr	52,42 kr
2000 +	2,061 kr	41,22 kr

*vägledande pris

RS-artikelnummer:: 180-7829
Tillv. art.nr:: SI2399DS-T1-GE3
Tillverkare / varumärke:: Vishay

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Vishay
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	6A
	Maximum Drain Source Voltage Vds	20V
	Package Type	SOT-23
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	67mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	10nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	1.6W
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	150°C
	Width	2.64 mm
	Length	3.04mm
	Height	1.12mm
	Standards/Approvals	No
	Automotive Standard	No

	Välj alla
	Brand Vishay
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 6A
	Maximum Drain Source Voltage Vds 20V
	Package Type SOT-23
	Series TrenchFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 67mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 10nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 1.6W
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 150°C
	Width 2.64 mm
	Length 3.04mm
	Height 1.12mm
	Standards/Approvals No
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 20V and a maximum gate-source voltage of 12V. It has drain-source resistance of 34mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 2.5W and continuous drain current of 6A. The minimum and a maximum driving voltage for this transistor are 2.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• DC/DC converters

• Load switch

• PA switch

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested