Vishay Single E 1 Type N-Channel Power MOSFET, 26 A, 500 V, 3-Pin TO-220AB SIHP25N50E-GE3

RS-artikelnummer:: 180-7790
Tillv. art.nr:: SIHP25N50E-GE3
Tillverkare / varumärke:: Vishay

Vishay Single E 1 Type N-Channel Power MOSFET, 26 A, 500 V, 3-Pin TO-220AB SIHP25N50E-GE3

Mängdrabatt möjlig

Antal (1 förpackning med 5 enheter)*

166,66 kr

(exkl. moms)

208,325 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

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Dessutom levereras 280 enhet(er) från den 29 december 2025

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Enheter	Per enhet	Per förpackning*
5 - 45	33,332 kr	166,66 kr
50 - 120	30,662 kr	153,31 kr
125 - 245	28,314 kr	141,57 kr
250 - 495	26,666 kr	133,33 kr
500 +	24,982 kr	124,91 kr

*vägledande pris

RS-artikelnummer:: 180-7790
Tillv. art.nr:: SIHP25N50E-GE3
Tillverkare / varumärke:: Vishay

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	26A
	Maximum Drain Source Voltage Vds	500V
	Package Type	TO-220AB
	Series	E
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.145Ω
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	±30 V
	Typical Gate Charge Qg @ Vgs	86nC
	Maximum Power Dissipation Pd	250W
	Forward Voltage Vf	1.2V
	Transistor Configuration	Single
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Height	6.71mm
	Width	10.52 mm
	Length	14.4mm
	Number of Elements per Chip	1
	Automotive Standard	No

	Välj alla
	Brand Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 26A
	Maximum Drain Source Voltage Vds 500V
	Package Type TO-220AB
	Series E
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.145Ω
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs ±30 V
	Typical Gate Charge Qg @ Vgs 86nC
	Maximum Power Dissipation Pd 250W
	Forward Voltage Vf 1.2V
	Transistor Configuration Single
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Height 6.71mm
	Width 10.52 mm
	Length 14.4mm
	Number of Elements per Chip 1
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay through-hole mount N-channel TO-220AB-3 MOSFET is a new age product with a drain-source voltage of 500V and a maximum gate-source voltage of 30V. It has a drain-source resistance of 145mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 250W and continuous drain current of 26A. It has a driving voltage of 10V. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Low figure-of-merit (FOM): Ron x Qg

• Low gate charge (Qg)

• Low input capacitance (Ciss)

• Operating temperature ranges between -55°C and 150°C

• Reduced switching and conduction losses

Applications

• Hard switched topologies

• PC silver box/ATX power supplies

• Power factor correction power supplies (PFC)

• Switch mode power supplies (SMPS)

• Two-stage LED lighting

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• UIS tested