Vishay TrenchFET Type P-Channel MOSFET, 3.5 A, 30 V Enhancement, 3-Pin SOT-23 SI2307CDS-T1-GE3
- RS-artikelnummer:
- 180-7738
- Tillv. art.nr:
- SI2307CDS-T1-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 25 enheter)*
119,40 kr
(exkl. moms)
149,25 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 100 enhet(er) är redo att levereras
- Dessutom levereras 2 500 enhet(er) från den 09 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 - 225 | 4,776 kr | 119,40 kr |
| 250 - 600 | 4,673 kr | 116,83 kr |
| 625 - 1225 | 3,53 kr | 88,25 kr |
| 1250 - 2475 | 2,818 kr | 70,45 kr |
| 2500 + | 2,15 kr | 53,75 kr |
*vägledande pris
- RS-artikelnummer:
- 180-7738
- Tillv. art.nr:
- SI2307CDS-T1-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 3.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 138mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 4.1nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.14W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Height | 1.12mm | |
| Width | 2.64 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 3.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 138mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 4.1nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.14W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Height 1.12mm | ||
Width 2.64 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount dual P-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 20V. It has drain-source resistance of 88mohm at a gate-source voltage of 10V. It has continuous drain current of 3.5A and a maximum power rating of 1.8W. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. It has application in load switches for portable devices. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
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