onsemi NTHL Type N-Channel MOSFET, 30 A, 650 V Enhancement, 3-Pin TO-247

RS-artikelnummer:: 178-4256
Tillv. art.nr:: NTHL110N65S3F
Tillverkare / varumärke:: onsemi

onsemi NTHL Type N-Channel MOSFET, 30 A, 650 V Enhancement, 3-Pin TO-247

Mängdrabatt möjlig

Antal (1 rör med 30 enheter)*

1 416,12 kr

(exkl. moms)

1 770,15 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

I lager

390 enhet(er) är redo att levereras

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Enheter	Per enhet	Per Rør*
30 - 90	47,204 kr	1 416,12 kr
120 - 240	41,306 kr	1 239,18 kr
270 - 480	40,223 kr	1 206,69 kr
510 - 990	39,226 kr	1 176,78 kr
1020 +	38,237 kr	1 147,11 kr

*vägledande pris

RS-artikelnummer:: 178-4256
Tillv. art.nr:: NTHL110N65S3F
Tillverkare / varumärke:: onsemi

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	650V
	Series	NTHL
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	110mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	58nC
	Maximum Power Dissipation Pd	240W
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	15.87mm
	Height	20.82mm
	Width	4.82 mm
	Automotive Standard	No

	Välj alla
	Brand onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 650V
	Series NTHL
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 110mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 58nC
	Maximum Power Dissipation Pd 240W
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 15.87mm
	Height 20.82mm
	Width 4.82 mm
	Automotive Standard No

COO (Country of Origin):: CN

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.

Features:

700 V @ TJ = 150 °C

Ultra Low Gate Charge (Typ. Qg = 58 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 553 pF)

Excellent body diode performance (low Qrr, robust body diode)

Optimized Capacitance

Typ. RDS(on) = 98 mΩ

Benefits:

Higher system reliability at low temperature operation

Lower switching loss

Higher system reliability in LLC and Phase shift full bridge circuit

Lower peak Vds and lower Vgs oscillation

Applications:

Telecommunication

Cloud system

Industrial

End Products:

Telecom power

Server power

EV charger

Solar / UPS

onsemi NTHL Type N-Channel MOSFET, 30 A, 650 V Enhancement, 3-Pin TO-247

GRATIS leverans för online beställningar över 500,00 kr

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