onsemi NTHL Type N-Channel MOSFET, 65 A, 650 V Enhancement, 3-Pin TO-247 NTHL040N65S3F

RS-artikelnummer:: 178-4448
Tillv. art.nr:: NTHL040N65S3F
Tillverkare / varumärke:: onsemi

onsemi NTHL Type N-Channel MOSFET, 65 A, 650 V Enhancement, 3-Pin TO-247 NTHL040N65S3F

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onsemi NTHL Type N-Channel MOSFET, 65 A, 650 V Enhancement, 3-Pin TO-247

RS-artikelnummer: 178-4253

Var (i ett rör med 30)

110,055 kr

(exkl. moms)

137,569 kr

(inkl. moms)

RS-artikelnummer:: 178-4448
Tillv. art.nr:: NTHL040N65S3F
Tillverkare / varumärke:: onsemi

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	65A
	Maximum Drain Source Voltage Vds	650V
	Series	NTHL
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	40mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30 V
	Typical Gate Charge Qg @ Vgs	158nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	446W
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	15.87mm
	Height	20.82mm
	Width	4.82 mm
	Automotive Standard	No

	Välj alla
	Brand onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 65A
	Maximum Drain Source Voltage Vds 650V
	Series NTHL
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 40mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30 V
	Typical Gate Charge Qg @ Vgs 158nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 446W
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 15.87mm
	Height 20.82mm
	Width 4.82 mm
	Automotive Standard No

COO (Country of Origin):: CN

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.

Features

700 V @ TJ = 150

Ultra Low Gate Charge (Typ. Qg = 158 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 1366pF)

Excellent body diode performance (low Qrr, robust body diode)

Optimized Capacitance

Typ. RDS(on) = 32 mΩ

Applications

Telecommunication

Cloud system

Industrial

Benefits

Higher system reliability at low temperature operation

Lower switching loss

Higher system reliability in LLC and Phase shift full bridge circuit

Lower peak Vds and lower Vgs oscillation

End Products

Telecom power

Server power

EV charger

Solar / UPS

onsemi NTHL Type N-Channel MOSFET, 65 A, 650 V Enhancement, 3-Pin TO-247 NTHL040N65S3F

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