Vishay Siliconix TrenchFET Type P-Channel MOSFET, 3.6 A, 40 V Enhancement, 3-Pin SOT-23 Si2319DDS-T1-GE3

RS-artikelnummer:: 178-3853
Tillv. art.nr:: Si2319DDS-T1-GE3
Tillverkare / varumärke:: Vishay Siliconix

Vishay Siliconix TrenchFET Type P-Channel MOSFET, 3.6 A, 40 V Enhancement, 3-Pin SOT-23 Si2319DDS-T1-GE3

Mängdrabatt möjlig

Antal (1 förpackning med 50 enheter)*

211,00 kr

(exkl. moms)

264,00 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

Sista RS lager

Slutlig(a) 4 900 enhet(er), redo att levereras

Enheter	Per enhet	Per förpackning*
50 - 50	4,22 kr	211,00 kr
100 - 450	3,584 kr	179,20 kr
500 - 950	3,167 kr	158,35 kr
1000 +	2,74 kr	137,00 kr

*vägledande pris

RS-artikelnummer:: 178-3853
Tillv. art.nr:: Si2319DDS-T1-GE3
Tillverkare / varumärke:: Vishay Siliconix

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

Hitta liknande produkter genom att välja ett eller flera attribut.

Välj alla	Attribut	Värde
	Brand	Vishay Siliconix
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	3.6A
	Maximum Drain Source Voltage Vds	40V
	Package Type	SOT-23
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	100mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	1.7W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	12.5nC
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	3.04mm
	Height	1.02mm
	Width	1.4 mm
	Automotive Standard	No

	Välj alla
	Brand Vishay Siliconix
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 3.6A
	Maximum Drain Source Voltage Vds 40V
	Package Type SOT-23
	Series TrenchFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 100mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 1.7W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 12.5nC
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 3.04mm
	Height 1.02mm
	Width 1.4 mm
	Automotive Standard No

Datasheet

RoHS-status: Undantagen

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 40V and a maximum gate-source voltage of 20V. It has drain-source resistance of 75mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 1.7W and continuous drain current of 3.6A. The minimum and a maximum driving voltage for this MOSFET is 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• Battery switch

• Load switch

• Motor drive control

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested