Vishay IRF Type P-Channel MOSFET, 1.8 A, 200 V Enhancement, 3-Pin TO-220 IRF9610PBF
- RS-artikelnummer:
- 178-0837
- Tillv. art.nr:
- IRF9610PBF
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 rör med 50 enheter)*
585,85 kr
(exkl. moms)
732,30 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 900 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per Rør* |
|---|---|---|
| 50 - 50 | 11,717 kr | 585,85 kr |
| 100 - 200 | 9,959 kr | 497,95 kr |
| 250 + | 9,374 kr | 468,70 kr |
*vägledande pris
- RS-artikelnummer:
- 178-0837
- Tillv. art.nr:
- IRF9610PBF
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 1.8A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | IRF | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -5.8V | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.7 mm | |
| Standards/Approvals | No | |
| Height | 9.01mm | |
| Length | 10.41mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 1.8A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series IRF | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -5.8V | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Operating Temperature 150°C | ||
Width 4.7 mm | ||
Standards/Approvals No | ||
Height 9.01mm | ||
Length 10.41mm | ||
Automotive Standard No | ||
The Vishay power MOSFETs technology is the key to advanced line of power MOSFET transistors. The efficient geometry and unique processing of the power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
Dynamic dV/dt rating
Ease of paralleling
Simple drive requirements
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