Microchip TN2106 Type N-Channel MOSFET, 280 mA, 60 V Enhancement, 3-Pin SOT-23 TN2106K1-G

RS-artikelnummer:: 177-9842
Tillv. art.nr:: TN2106K1-G
Tillverkare / varumärke:: Microchip

Microchip TN2106 Type N-Channel MOSFET, 280 mA, 60 V Enhancement, 3-Pin SOT-23 TN2106K1-G

Antal (1 förpackning med 20 enheter)*

100,62 kr

(exkl. moms)

125,78 kr

(inkl. moms)

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Enheter	Per enhet	Per förpackning*
20 +	5,031 kr	100,62 kr

*vägledande pris

RS-artikelnummer:: 177-9842
Tillv. art.nr:: TN2106K1-G
Tillverkare / varumärke:: Microchip

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Microchip
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	280mA
	Maximum Drain Source Voltage Vds	60V
	Series	TN2106
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	5Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	360mW
	Forward Voltage Vf	1.8V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	1.02mm
	Width	1.4 mm
	Length	3.04mm
	Automotive Standard	No

	Välj alla
	Brand Microchip
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 280mA
	Maximum Drain Source Voltage Vds 60V
	Series TN2106
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 5Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 360mW
	Forward Voltage Vf 1.8V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 1.02mm
	Width 1.4 mm
	Length 3.04mm
	Automotive Standard No

Datasheet

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low CISS and fast switching speeds

Excellent thermal stability

Integral source-drain diode

High input impedance and high gain

Microchip TN2106 Type N-Channel MOSFET, 280 mA, 60 V Enhancement, 3-Pin SOT-23 TN2106K1-G

GRATIS leverans för online beställningar över 500,00 kr

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