Microchip VN0106 Type N-Channel MOSFET, 350 A, 60 V Enhancement, 3-Pin TO-92 VN0106N3-G
- RS-artikelnummer:
- 264-8941
- Tillv. art.nr:
- VN0106N3-G
- Tillverkare / varumärke:
- Microchip
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79,52 kr
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99,40 kr
(inkl. moms)
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 40 | 7,952 kr | 79,52 kr |
| 50 - 90 | 7,795 kr | 77,95 kr |
| 100 - 240 | 4,48 kr | 44,80 kr |
| 250 - 490 | 4,368 kr | 43,68 kr |
| 500 + | 4,256 kr | 42,56 kr |
*vägledande pris
- RS-artikelnummer:
- 264-8941
- Tillv. art.nr:
- VN0106N3-G
- Tillverkare / varumärke:
- Microchip
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Microchip | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 350A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-92 | |
| Series | VN0106 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Microchip | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 350A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-92 | ||
Series VN0106 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Microchip P-Channel low threshold, enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
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