onsemi Single SiC Power Module, 28 A, 3-Pin TO-220 FFSP3065A

RS-artikelnummer:: 172-8971
Tillv. art.nr:: FFSP3065A
Tillverkare / varumärke:: onsemi

onsemi Single SiC Power Module, 28 A, 3-Pin TO-220 FFSP3065A

Mängdrabatt möjlig

Antal (1 förpackning med 2 enheter)*

188,05 kr

(exkl. moms)

235,062 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

Sista RS lager

Slutlig(a) 198 enhet(er), redo att levereras

Enheter	Per enhet	Per förpackning*
2 - 8	94,025 kr	188,05 kr
10 - 98	81,09 kr	162,18 kr
100 - 248	75,60 kr	151,20 kr
250 - 498	73,695 kr	147,39 kr
500 +	71,85 kr	143,70 kr

*vägledande pris

RS-artikelnummer:: 172-8971
Tillv. art.nr:: FFSP3065A
Tillverkare / varumärke:: onsemi

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	onsemi
	Product Type	SiC Power Module
	Maximum Continuous Drain Current Id	28A
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	240W
	Forward Voltage Vf	2.4V
	Maximum Operating Temperature	175°C
	Transistor Configuration	Single
	Width	4.8 mm
	Height	16.51mm
	Standards/Approvals	No
	Length	10.67mm
	Automotive Standard	No

	Välj alla
	Brand onsemi
	Product Type SiC Power Module
	Maximum Continuous Drain Current Id 28A
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 240W
	Forward Voltage Vf 2.4V
	Maximum Operating Temperature 175°C
	Transistor Configuration Single
	Width 4.8 mm
	Height 16.51mm
	Standards/Approvals No
	Length 10.67mm
	Automotive Standard No

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 650 V, D1, TO-220-2L
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 650 V, D1, TO-220-2L

The ON Semiconductor TO-220-2L silicon carbide (SiC) Schottky diode is the latest product that uses a completely new technology that provides superior switching performance and higher reliability to silicon. The diode has many advanced features like temperature independent switching characteristics and excellent thermal performance that makes it undoubtedly the next-generation power semiconductor. This diode offers many benefits that include the highest efficiency, faster-operating frequency, increased power density, reduced EMI and reduced system size and cost.

Features and Benefits

• Avalanche rated 180mJ

• Ease of paralleling

• High surge current capacity

• No reverse recovery/no forward recovery

• Operating temperature ranges between -55°C and 175°C

• Positive temperature coefficient

Applications

• EV charger

• General purpose

• Industrial power

• PFC

• Power switching circuits

• SMPS

• Solar inverter

• UPS

• Welding

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007