Littelfuse Type N-Channel SiC Power Module, 36 A, 12 V Enhancement, 3-Pin TO-220 IXFP36N60X3
- RS-artikelnummer:
- 245-7009
- Tillv. art.nr:
- IXFP36N60X3
- Tillverkare / varumärke:
- Littelfuse
Mängdrabatt möjlig
Antal (1 enhet)*
55,82 kr
(exkl. moms)
69,78 kr
(inkl. moms)
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- Dessutom levereras 298 enhet(er) från den 29 december 2025
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Enheter | Per enhet |
|---|---|
| 1 - 9 | 55,82 kr |
| 10 - 24 | 50,35 kr |
| 25 - 49 | 49,34 kr |
| 50 - 99 | 47,84 kr |
| 100 + | 41,59 kr |
*vägledande pris
- RS-artikelnummer:
- 245-7009
- Tillv. art.nr:
- IXFP36N60X3
- Tillverkare / varumärke:
- Littelfuse
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Littelfuse | |
| Channel Type | Type N | |
| Product Type | SiC Power Module | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | TO-220 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 90mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.4V | |
| Maximum Power Dissipation Pd | 446W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Littelfuse | ||
Channel Type Type N | ||
Product Type SiC Power Module | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type TO-220 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 90mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.4V | ||
Maximum Power Dissipation Pd 446W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Littelfuse product is a 600V X3 Class Ultra Junction MOSFET available in 36A nominal current rating and TO 220 package. These Power MOSFETs feature significantly reduced channel resistance RDS on and gate charge Qg. They feature the lowest figures of merit RDS on and RDS on. These benefits enable designers to achieve higher efficiency using simplified thermal design. This HiPerFET series of power MOSFETs feature body diodes which offer low reverse recovery charge and short reverse recovery time.
Low static losses
Well-suited for high frequency applications
Simplified thermal design
High ruggedness against overvoltage
Low gate drive power demand
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