Infineon IPT015N10N5 Type N-Channel MOSFET, 300 A, 100 V Enhancement, 9-Pin HSOF IPT015N10N5ATMA1

RS-artikelnummer:: 171-1991
Tillv. art.nr:: IPT015N10N5ATMA1
Tillverkare / varumärke:: Infineon

Infineon IPT015N10N5 Type N-Channel MOSFET, 300 A, 100 V Enhancement, 9-Pin HSOF IPT015N10N5ATMA1

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325,89 kr

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RS-artikelnummer:: 171-1991
Tillv. art.nr:: IPT015N10N5ATMA1
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	300A
	Maximum Drain Source Voltage Vds	100V
	Package Type	HSOF
	Series	IPT015N10N5
	Mount Type	Surface
	Pin Count	9
	Maximum Drain Source Resistance Rds	2mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	169nC
	Forward Voltage Vf	0.9V
	Maximum Power Dissipation Pd	375W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	10.1mm
	Width	10.58 mm
	Height	2.4mm
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 300A
	Maximum Drain Source Voltage Vds 100V
	Package Type HSOF
	Series IPT015N10N5
	Mount Type Surface
	Pin Count 9
	Maximum Drain Source Resistance Rds 2mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 169nC
	Forward Voltage Vf 0.9V
	Maximum Power Dissipation Pd 375W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 10.1mm
	Width 10.58 mm
	Height 2.4mm
	Automotive Standard No

Infineon MOSFET

The Infineon HSOF-8 surface mount N-channel MOSFET is a new age product with a drain-source resistance of 1.5mohm at a gate-source voltage of 10V. The MOSFET has continuous drain current of 300A. It has a maximum gate-source voltage of 20V and drain-source voltage of 100V. It has a maximum power dissipation of 375W. The MOSFET has a minimum and a maximum driving voltage of 6V and 10V respectively. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• 100% avalanche tested

• Excellent gate charge x RDS (on) product (FOM)

• Halogen free

• Highest system efficiency

• Ideal for high switching frequency

• Increased power density

• Lead (Pb) free plating

• Low voltage overshoot

• Operating temperature ranges between -55°C and 175°C

• Optimized for synchronous rectification

• Output capacitance reduction of up to 44%

• RDS (on) reduction of up to 44%

• Very low on resistance RDS (on)

Applications

• Adapter

• Light electric vehicles

• Low voltage drives

• Server power supplies

• Solar

• Telecommunication

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC61249-2-21

• JEDEC