Infineon Si4435DYPbF Type P-Channel MOSFET, 8 A, 30 V Enhancement, 8-Pin SO-8 SI4435DYTRPBF
- RS-artikelnummer:
- 171-1913
- Tillv. art.nr:
- SI4435DYTRPBF
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
77,75 kr
(exkl. moms)
97,19 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 6 560 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 90 | 7,775 kr | 77,75 kr |
| 100 - 240 | 7,381 kr | 73,81 kr |
| 250 - 490 | 7,067 kr | 70,67 kr |
| 500 - 990 | 6,776 kr | 67,76 kr |
| 1000 + | 6,294 kr | 62,94 kr |
*vägledande pris
- RS-artikelnummer:
- 171-1913
- Tillv. art.nr:
- SI4435DYTRPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SO-8 | |
| Series | Si4435DYPbF | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 35mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Height | 1.5mm | |
| Width | 4 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SO-8 | ||
Series Si4435DYPbF | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 35mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 5mm | ||
Height 1.5mm | ||
Width 4 mm | ||
Automotive Standard No | ||
Uppfyller ej RoHS
The Infineon SI4435DY is the 30V single P-channel HEXFET power MOSFET in a SO-8 package. These P-channel HEXFET power MOSFETs from International Rectifier utilize Advanced processing techniques to achieve the extremely low on-resistance per silicon area.
P-channel MOSFET
Surface mount
Available in tape and reel
Lead free
relaterade länkar
- Infineon Si4435DYPbF Type P-Channel MOSFET 30 V Enhancement, 8-Pin SO-8
- Infineon Type P-Channel MOSFET 60 V P, 8-Pin SO-8
- Infineon Type P-Channel MOSFET 60 V P, 8-Pin SO-8 BSO613SPVGXUMA1
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 40 V Enhancement, 8-Pin SO-8
- International Rectifier IRF7424PbF Type P-Channel Power MOSFET 30 V Enhancement, 8-Pin SO-8
- Vishay Type P-Channel MOSFET -30 V Enhancement, 8-Pin SO-8
- Vishay Type P-Channel MOSFET -30 V Enhancement, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8