Infineon Si4435DYPbF Type P-Channel MOSFET, 8 A, 30 V Enhancement, 8-Pin SO-8

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Antal (1 rulle med 4000 enheter)*

13 400,00 kr

(exkl. moms)

16 760,00 kr

(inkl. moms)

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4000 +3,35 kr13 400,00 kr

*vägledande pris

RS-artikelnummer:
170-2264
Tillv. art.nr:
SI4435DYTRPBF
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

30V

Series

Si4435DYPbF

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

35mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2.5W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

40nC

Forward Voltage Vf

-1.2V

Maximum Operating Temperature

150°C

Length

5mm

Standards/Approvals

No

Height

1.5mm

Width

4 mm

Automotive Standard

No

Uppfyller ej RoHS

The Infineon SI4435DY is the 30V single P-channel HEXFET power MOSFET in a SO-8 package. These P-channel HEXFET power MOSFETs from International Rectifier utilize Advanced processing techniques to achieve the extremely low on-resistance per silicon area.

P-channel MOSFET

Surface mount

Available in tape and reel

Lead free

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