Nexperia PMV30UN2 Type N-Channel MOSFET, 5.4 A, 20 V Enhancement, 3-Pin SOT-23 PMV30UN2R
- RS-artikelnummer:
- 170-5432
- Tillv. art.nr:
- PMV30UN2R
- Tillverkare / varumärke:
- Nexperia
Mängdrabatt möjlig
Antal (1 förpackning med 50 enheter)*
182,00 kr
(exkl. moms)
227,50 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 27 juli 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 50 - 200 | 3,64 kr | 182,00 kr |
| 250 - 450 | 3,275 kr | 163,75 kr |
| 500 - 1200 | 2,916 kr | 145,80 kr |
| 1250 - 2450 | 2,551 kr | 127,55 kr |
| 2500 + | 2,186 kr | 109,30 kr |
*vägledande pris
- RS-artikelnummer:
- 170-5432
- Tillv. art.nr:
- PMV30UN2R
- Tillverkare / varumärke:
- Nexperia
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5.4A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | PMV30UN2 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 6.2nC | |
| Maximum Power Dissipation Pd | 5W | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Height | 1mm | |
| Width | 1.4 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5.4A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series PMV30UN2 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 6.2nC | ||
Maximum Power Dissipation Pd 5W | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Height 1mm | ||
Width 1.4 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Switching solutions for your portable designs. Choose from a wide range of single and dual N-channel MOSFETs up to 20 V. Great reliability due to our trusted TrenchMOS and package technologies. Easy-to-use, our low voltage MOSFETs are designed specifically to meet the demands of portable applications with low drive voltages.
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Low threshold voltage
Very fast switching
Enhanced power dissipation capability of 1000 mW
Target applications
LED driver
Power management
Low-side load switch
Switching circuits
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