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Nexperia PMV30UN2 Type N-Channel MOSFET, 5.4 A, 20 V Enhancement, 3-Pin SOT-23

RS-artikelnummer:: 170-4846
Tillv. art.nr:: PMV30UN2R
Tillverkare / varumärke:: Nexperia

Nexperia PMV30UN2 Type N-Channel MOSFET, 5.4 A, 20 V Enhancement, 3-Pin SOT-23

Mängdrabatt möjlig

Antal (1 rulle med 3000 enheter)*

4 191,00 kr

(exkl. moms)

5 238,00 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

Tillfälligt slut

Leverans från den 27 juli 2026

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Enheter	Per enhet	Per rulle*
3000 - 3000	1,397 kr	4 191,00 kr
6000 - 12000	1,336 kr	4 008,00 kr
15000 - 27000	1,298 kr	3 894,00 kr
30000 - 72000	1,245 kr	3 735,00 kr
75000 +	1,211 kr	3 633,00 kr

*vägledande pris

RS-artikelnummer:: 170-4846
Tillv. art.nr:: PMV30UN2R
Tillverkare / varumärke:: Nexperia

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

Hitta liknande produkter genom att välja ett eller flera attribut.

Välj alla	Attribut	Värde
	Brand	Nexperia
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	5.4A
	Maximum Drain Source Voltage Vds	20V
	Package Type	SOT-23
	Series	PMV30UN2
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	100mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	6.2nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	5W
	Maximum Gate Source Voltage Vgs	12 V
	Maximum Operating Temperature	150°C
	Height	1mm
	Standards/Approvals	No
	Width	1.4 mm
	Length	3mm
	Automotive Standard	No

	Välj alla
	Brand Nexperia
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 5.4A
	Maximum Drain Source Voltage Vds 20V
	Package Type SOT-23
	Series PMV30UN2
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 100mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 6.2nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 5W
	Maximum Gate Source Voltage Vgs 12 V
	Maximum Operating Temperature 150°C
	Height 1mm
	Standards/Approvals No
	Width 1.4 mm
	Length 3mm
	Automotive Standard No

COO (Country of Origin):: CN

Switching solutions for your portable designs. Choose from a wide range of single and dual N-channel MOSFETs up to 20 V. Great reliability due to our trusted TrenchMOS and package technologies. Easy-to-use, our low voltage MOSFETs are designed specifically to meet the demands of portable applications with low drive voltages.

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology

Low threshold voltage

Very fast switching

Enhanced power dissipation capability of 1000 mW

Target applications

LED driver

Power management

Low-side load switch

Switching circuits

Nexperia PMV30UN2 Type N-Channel MOSFET, 5.4 A, 20 V Enhancement, 3-Pin SOT-23

GRATIS leverans för online beställningar över 500,00 kr

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