onsemi PowerTrench Dual N-Channel MOSFET, 600 mA, 20 V, 6-Pin SC-89-6 FDY3000NZ
- RS-artikelnummer:
- 166-1809
- Tillv. art.nr:
- FDY3000NZ
- Tillverkare / varumärke:
- onsemi
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- RS-artikelnummer:
- 166-1809
- Tillv. art.nr:
- FDY3000NZ
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 600 mA | |
| Maximum Drain Source Voltage | 20 V | |
| Series | PowerTrench | |
| Package Type | SC-89-6 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 700 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.6V | |
| Maximum Power Dissipation | 625 mW | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 2 | |
| Length | 1.6mm | |
| Width | 1.2mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 0.8 nC @ 4.5 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.5mm | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 600 mA | ||
Maximum Drain Source Voltage 20 V | ||
Series PowerTrench | ||
Package Type SC-89-6 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 700 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.6V | ||
Maximum Power Dissipation 625 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Transistor Material Si | ||
Number of Elements per Chip 2 | ||
Length 1.6mm | ||
Width 1.2mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 0.8 nC @ 4.5 V | ||
Minimum Operating Temperature -55 °C | ||
Height 0.5mm | ||
PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor
ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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