Infineon HEXFET Type N-Channel MOSFET, 2.7 A, 30 V Enhancement, 3-Pin SOT-23
- RS-artikelnummer:
- 165-7763
- Tillv. art.nr:
- IRLML2030TRPBF
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 rulle med 3000 enheter)*
3 012,00 kr
(exkl. moms)
3 765,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Leverans från den 30 mars 2026
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 3000 - 3000 | 1,004 kr | 3 012,00 kr |
| 6000 - 12000 | 0,953 kr | 2 859,00 kr |
| 15000 + | 0,893 kr | 2 679,00 kr |
*vägledande pris
- RS-artikelnummer:
- 165-7763
- Tillv. art.nr:
- IRLML2030TRPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.7A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 1nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.3W | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Height | 1.02mm | |
| Width | 1.4 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.7A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 1nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.3W | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Height 1.02mm | ||
Width 1.4 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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