Infineon Typ N Kanal, Effekt-MOSFET, 75 A 75 V Förbättring, 3 Ben, TO-263, HEXFET

Se alla MOSFET-transistor
För närvarande inte tillgänglig
Vi vet inte om den här artikeln kommer tillbaka i lager, RS har för avsikt att ta bort den från vårt utbud snart.
RS-artikelnummer:
165-5889
Tillv. art.nr:
IRF2807ZSTRLPBF
Tillverkare / varumärke:
Infineon
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Varumärke

Infineon

Produkttyp

Effekt-MOSFET

Kanaltyp

Typ N

Maximal kontinuerlig dräneringsström Id

75A

Maximal källspänning för dränering Vds

75V

Serie

HEXFET

Kapseltyp

TO-263

Fästetyp

Yta

Antal ben

3

Maximal drain-källresistans Rds

9.4mΩ

Kanalläge

Förbättring

Minsta arbetsstemperatur

-55°C

Maximal spänning för grindkälla Vgs

±20 V

Typisk grindladdning Qg @ Vgs

71nC

Framåtriktad spänning Vf

1.3V

Maximal effektförlust Pd

300W

Maximal arbetstemperatur

175°C

Bredd

9.65 mm

Längd

10.67mm

Standarder/godkännanden

No

Höjd

4.83mm

Fordonsstandard

Nej

COO (ursprungsland):
CN

Infineon HEXFET Series MOSFET, 89A Maximum Continuous Drain Current, 170W Maximum Power Dissipation - IRF2807ZSTRLPBF


This MOSFET is designed for high-performance switching applications, offering efficiency and reliability across various electronic circuits. Its low on-resistance and strong thermal characteristics make it essential for users in automation, electrical, and mechanical sectors, enabling effective power management and reduced energy loss.

Features & Benefits


• Continuous drain current up to 89A

• Maximum drain-source voltage of 75V

• Operating temperature up to +175°C for thermal stability

• Low Rds(on) of 9.4 mΩ to reduce power loss

• Quick switching abilities enhance system responsiveness

• Enhancement mode device for optimal operation

Applications


• Used in power supply circuits for efficient energy conversion

• Employed in automotive and industrial systems for motor control

• Suitable for DC-DC converters and switching regulators

• Applicable in high-frequency switching in electronics

• Utilised for overload protection in various electrical systems

What is the maximum gate-source voltage this component can handle?


It can manage a maximum gate-source voltage of ±20V, ensuring compatibility with diverse control signals.

How does this component perform under high temperatures?


With a maximum operating temperature of +175°C, it remains stable and functional in high-temperature environments, making it suitable for such applications.

What is the purpose of the low on-resistance feature?


The low on-resistance minimises heat generation and enhances efficiency during operation, which is important for high current applications.

Can it be used in both surface mount and through-hole designs?


This device is specifically designed for surface mount technology in a D2PAK package, optimising space and thermal performance.

How does the switching speed benefit system design?


Fast switching improves overall system efficiency and allows for compact design by facilitating higher frequency operation in power management solutions.

Relaterade länkar