Infineon Isolated OptiMOS 2 2 Type N-Channel MOSFET, 950 mA, 20 V Enhancement, 6-Pin SC-88 BSD235NH6327XTSA1

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RS-artikelnummer:
165-5872
Tillv. art.nr:
BSD235NH6327XTSA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

950mA

Maximum Drain Source Voltage Vds

20V

Package Type

SC-88

Series

OptiMOS 2

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

600mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.9V

Maximum Gate Source Voltage Vgs

12 V

Maximum Power Dissipation Pd

500mW

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

0.32nC

Maximum Operating Temperature

150°C

Transistor Configuration

Isolated

Standards/Approvals

No

Length

2mm

Height

0.8mm

Width

1.25 mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN

Infineon OptiMOS™2 Power MOSFET Family


Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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