Sök efter MPN

Nexperia Type P-Channel MOSFET, -5.6 A, -20 V Enhancement, 3-Pin SOT-23 PMV27UPEAR

RS-artikelnummer:: 153-1876
Tillv. art.nr:: PMV27UPEAR
Tillverkare / varumärke:: Nexperia

Nexperia Type P-Channel MOSFET, -5.6 A, -20 V Enhancement, 3-Pin SOT-23 PMV27UPEAR

Mängdrabatt möjlig

Antal (1 förpackning med 25 enheter)*

101,925 kr

(exkl. moms)

127,40 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

Tillfälligt slut

3 000 enhet(er) levereras från den 20 maj 2026
Dessutom levereras 3 000 enhet(er) från den 27 maj 2026

Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"

Enheter	Per enhet	Per förpackning*
25 - 225	4,077 kr	101,93 kr
250 - 600	2,124 kr	53,10 kr
625 - 1225	1,967 kr	49,18 kr
1250 - 2475	1,913 kr	47,83 kr
2500 +	1,877 kr	46,93 kr

*vägledande pris

RS-artikelnummer:: 153-1876
Tillv. art.nr:: PMV27UPEAR
Tillverkare / varumärke:: Nexperia

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

Hitta liknande produkter genom att välja ett eller flera attribut.

Välj alla	Attribut	Värde
	Brand	Nexperia
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	-5.6A
	Maximum Drain Source Voltage Vds	-20V
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	63mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	14.7nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	4.15W
	Maximum Gate Source Voltage Vgs	8 V
	Maximum Operating Temperature	150°C
	Height	1mm
	Width	1.4 mm
	Length	3mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Välj alla
	Brand Nexperia
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id -5.6A
	Maximum Drain Source Voltage Vds -20V
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 63mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 14.7nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 4.15W
	Maximum Gate Source Voltage Vgs 8 V
	Maximum Operating Temperature 150°C
	Height 1mm
	Width 1.4 mm
	Length 3mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.

20 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology

Low threshold voltage

Very fast switching

Enhanced power dissipation capability: Ptot = 980 mW

ElectroStatic Discharge (ESD) protection 2 kV HBM

AEC-Q101 qualified

LED driver

Power management

High-side loadswitch

Switching circuits

Nexperia Type P-Channel MOSFET, -5.6 A, -20 V Enhancement, 3-Pin SOT-23 PMV27UPEAR

GRATIS leverans för online beställningar över 500,00 kr

relaterade länkar