Nexperia Type P-Channel MOSFET, -3.3 A, -20 V Enhancement, 3-Pin SOT-23 PMV65XPEAR

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RS-artikelnummer:
151-3159
Tillv. art.nr:
PMV65XPEAR
Tillverkare / varumärke:
Nexperia
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Brand

Nexperia

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

-3.3A

Maximum Drain Source Voltage Vds

-20V

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

125mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

5nC

Maximum Power Dissipation Pd

6.25W

Maximum Gate Source Voltage Vgs

12 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

1.4 mm

Standards/Approvals

No

Length

3mm

Height

1.1mm

Automotive Standard

AEC-Q101

Automotive MOSFETs, The world's largest portfolio of AEC-Q101 qualified power MOSFETs, An in-depth understanding of automotive system requirements and focused technical capability enables Nexperia to provide power semiconductor solutions across a wide spectrum of applications. From driving a simple lamp to the sophisticated needs of power control in engine, body or chassis applications, Nexperia Power Semiconductors can provide the answer to many automotive system power problems.

AEC-Q101 compliant

Repetitive avalanche rated

Suitable for thermally demanding environments due to 175°C rating

20 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology

Very fast switching

Enhanced power dissipation capability: Ptot = 890 mW

ElectroStatic Discharge (ESD) protection 2 kV HBM

AEC-Q101 qualified

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