Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

Hitta liknande produkter genom att välja ett eller flera attribut.

Välj alla	Attribut	Värde
	Brand	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	5.5 A
	Maximum Drain Source Voltage	600 V
	Series	UniFET
	Package Type	IPAK (TO-251)
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	1.25 Ω
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	3V
	Maximum Power Dissipation	90 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-25 V, +25 V
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	13 nC @ 10 V
	Length	6.8mm
	Transistor Material	Si
	Width	2.5mm
	Number of Elements per Chip	1
	Minimum Operating Temperature	-55 °C
	Height	7.57mm

	Välj alla
	Brand onsemi
	Channel Type N
	Maximum Continuous Drain Current 5.5 A
	Maximum Drain Source Voltage 600 V
	Series UniFET
	Package Type IPAK (TO-251)
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 1.25 Ω
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 3V
	Maximum Power Dissipation 90 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -25 V, +25 V
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 13 nC @ 10 V
	Length 6.8mm
	Transistor Material Si
	Width 2.5mm
	Number of Elements per Chip 1
	Minimum Operating Temperature -55 °C
	Height 7.57mm

UniFET™ N-Channel MOSFET, Fairchild Semiconductor

UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi UniFET N-Channel MOSFET, 5.5 A, 600 V, 3-Pin IPAK FDU7N60NZTU

UniFET™ N-Channel MOSFET, Fairchild Semiconductor

relaterade länkar