onsemi UniFET Type N-Channel MOSFET, 4.5 A, 600 V Enhancement, 3-Pin TO-220F

Antal (1 förpackning med 10 enheter)*

168,45 kr

(exkl. moms)

210,56 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
Sista RS lager
  • Slutlig(a) 60 enhet(er), redo att levereras
Enheter
Per enhet
Per förpackning*
10 +16,845 kr168,45 kr

*vägledande pris

RS-artikelnummer:
864-8622
Tillv. art.nr:
FDPF6N60ZUT
Tillverkare / varumärke:
onsemi
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4.5A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220F

Series

UniFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

14.5nC

Maximum Power Dissipation Pd

33.8W

Forward Voltage Vf

1.6V

Maximum Gate Source Voltage Vgs

±30 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

10.36mm

Height

16.07mm

Width

4.9 mm

Automotive Standard

No

UniFET™ N-Channel MOSFET, Fairchild Semiconductor


UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.

UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

relaterade länkar