onsemi Single SuperFET II 1 Type N-Channel MOSFET, 4.5 A, 600 V Enhancement, 3-Pin IPAK (TO-251) FCU900N60Z
- RS-artikelnummer:
- 864-4992
- Tillv. art.nr:
- FCU900N60Z
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 rör med 75 enheter)*
857,55 kr
(exkl. moms)
1 071,90 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 225 enhet(er), redo att levereras
Enheter | Per enhet | Per Rør* |
|---|---|---|
| 75 - 75 | 11,434 kr | 857,55 kr |
| 150 - 225 | 8,576 kr | 643,20 kr |
| 300 - 450 | 8,324 kr | 624,30 kr |
| 525 - 975 | 7,285 kr | 546,38 kr |
| 1050 + | 6,656 kr | 499,20 kr |
*vägledande pris
- RS-artikelnummer:
- 864-4992
- Tillv. art.nr:
- FCU900N60Z
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.5A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | IPAK (TO-251) | |
| Series | SuperFET II | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 52W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Width | 2.5 mm | |
| Length | 6.8mm | |
| Height | 6.3mm | |
| Number of Elements per Chip | 1 | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.5A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type IPAK (TO-251) | ||
Series SuperFET II | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 52W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Width 2.5 mm | ||
Length 6.8mm | ||
Height 6.3mm | ||
Number of Elements per Chip 1 | ||
SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor
Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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