Toshiba U-MOSVIII-H N-Channel MOSFET, 21 A, 100 V, 8-Pin TSON TPN3300ANH,LQ(S

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RS-artikelnummer:
133-2815
Tillv. art.nr:
TPN3300ANH,LQ(S
Tillverkare / varumärke:
Toshiba
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Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

21 A

Maximum Drain Source Voltage

100 V

Series

U-MOSVIII-H

Package Type

TSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

27 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.1mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

11 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

3.1mm

Height

0.85mm

Forward Diode Voltage

1.2V

COO (Country of Origin):
JP


MOSFET Transistors, Toshiba

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