Toshiba U-MOSVIII-H N-Channel MOSFET, 21 A, 100 V, 8-Pin TSON TPN3300ANH,LQ(S
- RS-artikelnummer:
- 133-2815
- Tillv. art.nr:
- TPN3300ANH,LQ(S
- Tillverkare / varumärke:
- Toshiba
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- RS-artikelnummer:
- 133-2815
- Tillv. art.nr:
- TPN3300ANH,LQ(S
- Tillverkare / varumärke:
- Toshiba
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 21 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | U-MOSVIII-H | |
| Package Type | TSON | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 33 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 27 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 3.1mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 11 nC @ 10 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Length | 3.1mm | |
| Height | 0.85mm | |
| Forward Diode Voltage | 1.2V | |
| Välj alla | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 21 A | ||
Maximum Drain Source Voltage 100 V | ||
Series U-MOSVIII-H | ||
Package Type TSON | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 33 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 27 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 3.1mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 11 nC @ 10 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Length 3.1mm | ||
Height 0.85mm | ||
Forward Diode Voltage 1.2V | ||
- COO (Country of Origin):
- JP
MOSFET Transistors, Toshiba
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