Toshiba U-MOSVIII-H Type N-Channel MOSFET, 157 A, 80 V Enhancement, 3-Pin TO-220 TK72E08N1,S1X(S
- RS-artikelnummer:
- 125-0591
- Tillv. art.nr:
- TK72E08N1,S1X(S
- Tillverkare / varumärke:
- Toshiba
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
77,95 kr
(exkl. moms)
97,45 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Dessutom levereras 20 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 20 | 15,59 kr | 77,95 kr |
| 25 - 45 | 9,386 kr | 46,93 kr |
| 50 - 120 | 8,556 kr | 42,78 kr |
| 125 - 245 | 8,468 kr | 42,34 kr |
| 250 + | 8,332 kr | 41,66 kr |
*vägledande pris
- RS-artikelnummer:
- 125-0591
- Tillv. art.nr:
- TK72E08N1,S1X(S
- Tillverkare / varumärke:
- Toshiba
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 157A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | U-MOSVIII-H | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.3mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.7V | |
| Maximum Power Dissipation Pd | 192W | |
| Typical Gate Charge Qg @ Vgs | 81nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 15.1mm | |
| Standards/Approvals | No | |
| Width | 4.45 mm | |
| Length | 10.16mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 157A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series U-MOSVIII-H | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.3mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.7V | ||
Maximum Power Dissipation Pd 192W | ||
Typical Gate Charge Qg @ Vgs 81nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Height 15.1mm | ||
Standards/Approvals No | ||
Width 4.45 mm | ||
Length 10.16mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
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