Toshiba U-MOSVIII-H Type N-Channel MOSFET, 263 A, 60 V Enhancement, 3-Pin TO-220 TK100E06N1,S1X(S
- RS-artikelnummer:
- 125-0528
- Tillv. art.nr:
- TK100E06N1,S1X(S
- Tillverkare / varumärke:
- Toshiba
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
92,56 kr
(exkl. moms)
115,70 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Dessutom levereras 20 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 20 | 18,512 kr | 92,56 kr |
| 25 - 45 | 16,698 kr | 83,49 kr |
| 50 - 120 | 15,198 kr | 75,99 kr |
| 125 - 245 | 14,218 kr | 71,09 kr |
| 250 + | 14,014 kr | 70,07 kr |
*vägledande pris
- RS-artikelnummer:
- 125-0528
- Tillv. art.nr:
- TK100E06N1,S1X(S
- Tillverkare / varumärke:
- Toshiba
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 263A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-220 | |
| Series | U-MOSVIII-H | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 140nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 255W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.16mm | |
| Width | 4.45 mm | |
| Height | 15.1mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 263A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-220 | ||
Series U-MOSVIII-H | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 140nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 255W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.16mm | ||
Width 4.45 mm | ||
Height 15.1mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET Transistors, Toshiba
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