Infineon CoolMOS CE Type N-Channel MOSFET, 14.1 A, 550 V Enhancement, 3-Pin TO-252 IPD50R380CEAUMA1
- RS-artikelnummer:
- 130-0897
- Tillv. art.nr:
- IPD50R380CEAUMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
94,71 kr
(exkl. moms)
118,39 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 50 enhet(er) från den 29 december 2025
- Dessutom levereras 10 enhet(er) från den 29 december 2025
- Dessutom levereras 180 enhet(er) från den 05 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 40 | 9,471 kr | 94,71 kr |
| 50 - 490 | 9,016 kr | 90,16 kr |
| 500 - 990 | 6,507 kr | 65,07 kr |
| 1000 - 2490 | 5,387 kr | 53,87 kr |
| 2500 + | 5,264 kr | 52,64 kr |
*vägledande pris
- RS-artikelnummer:
- 130-0897
- Tillv. art.nr:
- IPD50R380CEAUMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 14.1A | |
| Maximum Drain Source Voltage Vds | 550V | |
| Package Type | TO-252 | |
| Series | CoolMOS CE | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 380mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.85V | |
| Maximum Power Dissipation Pd | 98W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 24.8nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.41mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Width | 6.22 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 14.1A | ||
Maximum Drain Source Voltage Vds 550V | ||
Package Type TO-252 | ||
Series CoolMOS CE | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 380mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.85V | ||
Maximum Power Dissipation Pd 98W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 24.8nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 2.41mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Width 6.22 mm | ||
Automotive Standard No | ||
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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- Infineon CoolMOS CE Type N-Channel MOSFET 550 V Enhancement, 4-Pin SOT-223
